L2N7002KDW1T1G, S-L2N7002KDW1T1G
Small Signal MOSFET
6.ELECTRICAL CHARACTERISTICS CURVES
1.6
0.45
VGS=4.5V
VGS=5V
1.2
VGS=6V
VGS=7,8,9,10V
0.8
VGS=4V
VGS=3.5V
0.4
0
0
VGS=3V
VGS=2.5V
1
2
3
4
5
6
VDS, Drain-to-Source Voltage
On-Region Characteristics
0.4
0.35
0.3
0.25
150℃
0.2
25℃
0.15
0.1
-55℃
0.05
0
0 0.5 1 1.5 2 2.5 3 3.5
VGS, Gate-to-Source Voltage(V)
Transfer Characteristics
8
VGS=5V
7
6
5
150℃
4
85℃
3
25℃
2
-55℃
1
0
0
0.2
0.4
0.6
0.8
1
ID, Drain Current(A)
RDS(on) vs. ID
8
VGS=10V
7
6
5
150℃
4
3
85℃
25℃
2
-55℃
1
0
0
0.2
0.4
0.6
0.8
1
ID Drain Current(A)
RDS(on) vs. ID
Leshan Radio Company, LTD.
Rev.F Mar 2016
3/6