BU102 查看數據表（PDF） - Inchange Semiconductor

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BU102

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0

V(BR)EBO Emitter-base breakdown votage

IE=1mA; IC=0

V(BR)CBO Collector-base breakdown votage IC=1mA; IE=0

VCEsat Collector-emitter saturation voltage IC=5 A;IB=1.0 A

VBEsat Base-emitter saturation voltage

IC=5 A;IB=1.0 A

ICBO

Collector cut-off current

VCB=400V; IE=0

ICEO

Collector cut-off current

VCE=100V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=1A ; VCE=5V

Product Specification

BU102

MIN TYP. MAX UNIT

150

V

6

V

400

V

2.0

V

2.5

V

0.1

mA

1.0

mA

0.1

mA

30

120

2

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