SPB80N10L 查看數據表（PDF） - Infineon Technologies
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SPB80N10L Datasheet PDF : 8 Pages
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Preliminary data
SPI80N10L
SPP80N10L,SPB80N10L
13 Typ. avalanche energy
EAS = f (Tj)
par.: ID = 80 A , VDD = 25 V, RGS = 25
700
mJ
600
550
500
450
400
350
300
250
200
150
100
50
0
25 45 65 85 105 125 145 °C 185
Tj
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
14 Typ. gate charge
VGS = f (QGate)
parameter: ID = 80 A pulsed
SPP80N10L
16
V
12
10
0,2 VDS max
0,8 VDS max
8
6
4
2
0
0
40
80 120 160 200 nC 260
QGate
SPP80N10L
120
V
114
112
110
108
106
104
102
100
98
96
94
92
90
-60 -20 20 60 100 140 °C 200
Tj
Page 7
2002-08-14
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