OPB848TX 查看數據表（PDF） - Optek Technology
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OPB848TX Datasheet PDF : 2 Pages
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Types OPB847TX, OPB847TXV, OPB848TX, OPB848TXV
Electrical Characteristics (TA = 25o C unless otherwise noted)
Symbol
Parameter
Input Diode
Forward Voltage(4)
VF
Min Typ Max Units
Test Conditions
1.00 1.35 1.70
1.20 1.55 1.90
0.80 1.20 1.60
V IF = 20.0 mA
V IF = 20.0 mA, TA = -55o C
V IF = 20.0 mA, TA = 100o C
IR
Reverse Current
Output Phototransistor
0.1 100 µA VR = 2.0 V
V(BR)CEO Collector-Emitter Breakdown Voltage
50 110
V IC = 1.0 mA, IF = 0
V(BR)ECO Emitter-Collector Breakdown Voltage
7.0 10.0
V IE = 100 µA, IF = 0
IC(off)
Collector-Emitter Dark Current
Coupled
On-State Collector Current(4)
IC(on)
OPB847 4.0
OPB847 2.5
OPB847 2.5
OPB848 1.0
OPB848 0.6
OPB848 0.6
0.2 100 nA VCE = 10.0 V, IF = 0
10 100 µA VCE = 10.0 V, IF = 0, TA = 100o C
mA VCE = 10.0 V, IF = 20.0 mA
mA VCE = 10.0 V, IF = 20.0 mA, TA = -55o C
mA VCE = 10.0 V, IF = 20.0 mA, TA = 100o C
mA VCE = 10.0 V, IF = 20.0 mA
mA VCE = 10.0 V, IF = 20.0 mA, TA = -55o C
mA VCE = 10.0 V, IF = 20.0 mA, TA = 100o C
Collector-Emitter Saturation
VCE(SAT) Voltage
OPB847
OPB848
0.20 0.30
0.20 0.30
V IC = 2.0 mA, IF = 20.0 mA
V IC = 500 µA, IF = 20.0 mA
Output Rise Time
tr
Output Fall Time
tf
OPB847
OPB848
OPB847
OPB848
12.0 20.0
8.0 15.0
12.0 20.0
8.0 15.0
µs
µs VCC = 10.0 V, IF = 20.0 mA,
µs RL = 1,000 Ω
µs
(4) Measurement is taken during the last 500 µs of a single 1.0 ms test pulse. Heating due to increased pulse rate or pulse width can cause
change in measurement results.
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006
(972)323-2200
Fax (972)323-2396
13-41
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