2SD2061 查看數據表（PDF） - SavantIC Semiconductor

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2SD2061

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD2061

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=1mA , IB=0

V(BR)CBO Collector-base breakdown voltage

IC=50µA , IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=50µA , IC=0

VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A

VBEsat

Base-emitter saturation voltage

IC=2A ;IB=0.2A

ICBO

Collector cut-off current

VCB=60V IE=0

IEBO

Emitter cut-off current

VEB=4V; IC=0

hFE

DC current gain

IC=0.5A ; VCE=5V

fT

Transition frequency

IC=0.5A ; VCE=5V;f=5MHz

Cob

Output capacitance

IE=0 ; VCB=10V ,f=1MHz

hFE Classifications

E

F

100-200 160-320

MIN TYP. MAX UNIT

60

V

80

V

5

V

1.0

V

1.5

V

10

µA

10

µA

100

320

8

MHz

70

pF

2

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