BDX65B 查看數據表（PDF） - Inchange Semiconductor
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BDX65B Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDX65/A/B/C
DESCRIPTION
·Collector Current -IC= 12A
·High DC Current Gain-hFE= 1000(Min)@ IC= 5A
·Complement to Type BDX64/A/B/C
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDX65
80
VCBO
Collector-Base
Voltage
BDX65A
100
V
BDX65B
120
BDX65C
140
BDX65
60
VCEO
Collector-Emitter
Voltage
BDX65A
80
V
BDX65B
100
BDX65C
120
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
16
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
0.2
A
117
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.5 ℃/W
isc Website：www.iscsemi.cn
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