2SB1228 查看數據表（PDF） - Inchange Semiconductor

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2SB1228

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1228

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CBO Collector-base breakdown voltage

IC=-5mA; IE=0

-110

V

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=∞

-100

V

VCEsat Collector-emitter saturation voltage IC=-4A ; IB=-8mA

-1.0 -1.5

V

VBEsat Base-emitter saturation voltage

IC=-4A ; IB=-8mA

-2.0

V

ICBO

Collector cut-off current

VCB=-80V;IE=0

-0.1 mA

IEBO

Emitter cut-off current

VEB=-5V;IC=0

-3.0 mA

hFE

DC current gain

IC=-4A ; VCE=-3V

1500 4000

体 fT

Transition frequency

固I电NC半H导ANGE SEMICONDUCTOR Switching times

ton

Turn-on time

tstg

Storage time

IC=-4A ; VCE=-5V

IC=500IB1=-500IB2=-4A

VCC=-50V ,RL=12.5Ω

20

MHz

0.7

μs

1.4

μs

tf

Fall time

1.5

μs

2

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