HYB3116405BJ 查看數據表（PDF） - Infineon Technologies

零件编号

产品描述 (功能)

生产厂家

HYB3116405BJ

4M × 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode - EDO)

Infineon Technologies 

HYB 5116(7)405BJ-50/-60

HYB 3116(7)405BJ/BT(L)-50/-60

4M × 4 EDO-DRAM

AC Characteristics (cont’d) 5, 6

TA = 0 to 70 °C, VCC = 5 V ± 10 % / VCC = 3.3 V ± 0.3 V, tT = 2 ns

Parameter

Symbol

Limit Values

Unit Note

-50

-60

min. max. min. max.

Test Mode

Write command setup time

Write command hold time

CAS hold time

RAS hold time in test mode

tWTS

10 –

10 –

ns

tWTH

10 –

10 –

ns

tCHRT

30 –

30 –

ns

tRAHT

30 –

30 –

ns

Semiconductor Group

11

1998-10-01

Share Link: