ZXMN10A08E6TC 查看數據表（PDF） - Diodes Incorporated.
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ZXMN10A08E6TC Datasheet PDF : 8 Pages
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A Product Line of
Diodes Incorporated
ZXMN10A08E6
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol Min
V(BR)DSS
100
IDSS
⎯
IGSS
⎯
VGS(th)
2
Typ
⎯
⎯
⎯
⎯
Static Drain-Source On-Resistance (Note 4)
RDS (ON)
⎯
⎯
Forward Transconductance (Notes 4 & 6)
Diode Forward Voltage (Note 4)
Reverse recovery time (Note 6)
Reverse recovery charge (Note 6)
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
gfs
⎯
5.0
VSD
⎯
0.87
trr
⎯
27
Qrr
⎯
32
Ciss
⎯
405
Coss
⎯
28.2
Crss
⎯
14.2
Total Gate Charge
Qg
⎯
4.2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time (Note 5)
Turn-On Rise Time (Note 5)
Turn-Off Delay Time (Note 5)
Turn-Off Fall Time (Note 5)
Qg
⎯
7.7
Qgs
⎯
1.8
Qgd
⎯
2.1
tD(on)
⎯
3.4
tr
⎯
2.2
tD(off)
⎯
8
tf
⎯
3.2
Notes:
4. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
5. Switching characteristics are independent of operating junction temperatures.
6. For design aid only, not subject to production testing.
Max
⎯
0.5
±100
4
0.25
0.30
⎯
0.95
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Test Condition
V ID = 250μA, VGS = 0V
μA VDS = 100V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V
ID = 250μA, VDS = VGS
Ω
VGS = 10V, ID = 3.2A
VGS = 6V, ID = 2.6A
S VDS = 15V, ID = 3.2A
V IS = 3.2A, VGS = 0V
ns
nC IF = 1.2A, di/dt = 100A/μs
pF
pF
VDS = 50V, VGS = 0V
f = 1MHz
pF
nC VDS = 50V, VGS = 5V
ID = 1.2A
nC
nC VDS = 50V, VGS = 10V
ID = 1.2A
nC
ns
ns VDD = 30V, VGS = 10V
ns ID = 1.2A, RG ≅ 6.0Ω
ns
ZXMN10A08E6
Document Number DS31909 Rev. 7 - 2
4 of 8
www.diodes.com
October 2009
© Diodes Incorporated
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