NTE470 查看數據表（PDF） - NTE Electronics
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NTE470 Datasheet PDF : 2 Pages
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NTE470
Silicon NPN Transistor
RF Power Output
Description:
The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application
as a high–power linear amplifier from 2.0 to 30MHz.
Features:
D Specified 12.5V, 30MHz Characteristics:
Output Power = 100W (PEP)
Minimum Gain = 10dB
Efficiency
= 40%
D Intermodulation Distortion @ 100W (PEP): IMD = –30dB Min
D 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Withstand Current (10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 290W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.66W/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V(BR)CEO IC = 50mA, IB = 0
V(BR)CES IC = 200mA, VBE = 0
V(BR)CBO IC = 200mA, IE = 0
V(BR)EBO IE = 10mA, IC = 0
ICES VCE = 16V, VBE = 0, TC = +25°C
Min Typ Max Unit
20 –
–
V
45 –
–
V
45 –
–
V
3
–
–
V
–
– 10 mA
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