UMF5N 查看數據表（PDF） - ROHM Semiconductor
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UMF5N Datasheet PDF : 5 Pages
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Transistors
!Absolute maximum ratings (Ta=25°C)
Tr1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
−15
−12
−6
−500
−1.0
150(TOTAL)
150
−55~+150
∗1 Single pulse PW=1ms
∗2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Unit
V
V
V
mA
A ∗1
mW ∗2
°C
°C
DTr2
Parameter
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
VCC
VIN
IC
IO
PC
Tj
Tstg
Limits
50
−10~+40
100
30
150(TOTAL)
150
−55~+150
∗1 Characteristics of built-in transistor.
∗2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Unit
V
V
mA ∗1
mA
mW ∗2
°C
°C
UMF5N
!Electrical characteristics (Ta=25°C)
Tr1
Parameter
Symbol
Collector-emitter breakdown voltage
BVCEO
Collector-base breakdown voltage
BVCBO
Emitter-base breakdown voltage
BVEBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
Collector-emitter saturation voltage
VCE(sat)
DC current gain
hFE
Transition frequency
fT
Collector output capacitance
Cob
DTr2
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
∗Characteristics of built-in transistor.
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
fT
R1
R2/R1
Min. Typ. Max. Unit
Conditions
−12
−
−
V IC=−1mA
−15
−
−
V IC=−10µA
−6
−
−
V IE=−10µA
−
−
−100 nA VCB=−15V
−
−
−100 nA VEB=−6V
− −100 −250 mV IC=−200mA, IB=−10mA
270
−
680
− VCE=−2V, IC=−10mA
−
260
−
MHz VCE=−2V, IE=10mA, f=100MHz
−
6.5
−
pF VCB=−10V, IE=0mA, f=1MHz
Min.
−
3.0
−
−
−
68
−
32.9
0.8
Typ.
−
−
100
−
−
−
250
47
1.0
Max.
0.5
−
300
180
500
−
−
61.1
1.2
Unit
V
V
mV
µA
nA
−
MHz
kΩ
−
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=2mA
VO=10mA, II=0.5mA
VI=5V
VCC=50V, VI=0V
VO=5V, IO=5mA
VCE=10V, IE=−5mA, f=100MHz ∗
−
−
2/4
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