IRF720(2014) 查看數據表（PDF） - Vishay Semiconductors
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IRF720 Datasheet PDF : 8 Pages
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IRF720, SiHF720
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
TYP.
-
0.50
-
MAX.
62
-
2.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
MIN. TYP. MAX. UNIT
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
400
-
-
V
VDS Temperature Coefficient
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.51
-
V/°C
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = VGS, ID = 250 μA
VGS = ± 20
VDS = 400 V, VGS = 0 V
VDS = 320 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.0 A b
VDS = 50 V, ID = 2.0 A b
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 3.3 A,
VDS = 320 V,
see fig. 6 and 13 b
VDD = 200 V, ID = 3.3 A
Rg = 18 Ω, RD = 56 Ω, see fig. 10 b
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
μA
-
-
250
-
-
1.8
Ω
1.7
-
-
S
-
410
-
-
120
-
pF
-
47
-
-
-
20
-
-
3.3
nC
-
-
11
-
10
-
-
14
-
ns
-
30
-
-
13
-
Internal Drain Inductance
LD
Internal Source Inductance
LS
Drain-Source Body Diode Characteristics
Between lead,
D
6 mm (0.25") from
package and center of
G
die contact
S
-
4.5
-
nH
-
7.5
-
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current a
IS
MOSFET symbol
showing the
integral reverse
ISM
p - n junction diode
D
G
S
-
-
3.3
A
-
-
13
Body Diode Voltage
VSD
TJ = 25 °C, IS = 3.3 A, VGS = 0 V b
-
-
1.6
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
TJ = 25 °C, IF = 3.3 A, dI/dt = 100 A/μs b
-
-
270
600
ns
1.4
3.0
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
S14-2355-Rev. C, 08-Dec-14
2
Document Number: 91043
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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