AO9926EL 查看數據表（PDF） - Alpha and Omega Semiconductor

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AO9926EL

Dual N-Channel Enhancement Mode Field Effect Transistor

Alpha and Omega Semiconductor 

AO9926E

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

The AO9926E uses advanced trench technology to

provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 1.8V. This

device is suitable for use as a load switch or in PWM

applications. It is ESD protected. Standard Product

AO9926E is Pb-free (meets ROHS & Sony 259

specifications). AO9926EL is a Green Product

ordering option. AO9926E and AO9926EL are

Features

VDS (V) = 20V

ID = 8A (VGS = 4.5V)

RDS(ON) < 21mΩ (VGS = 4.5V)

RDS(ON) < 25mΩ (VGS = 2.5V)

RDS(ON) < 33mΩ (VGS = 1.8V)

ESD Rating: 2000V HBM

S2 1 8 D2

G2 2 7 D2

S1 3 6 D1

G1 4 5 D1

SOIC-8

D1

D2

G1

G2

S1

S2

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain TA=25°C

Current A

TA=70°C

ID

Pulsed Drain Current B

IDM

TA=25°C

Power Dissipation A TA=70°C

PD

Junction and Storage Temperature Range TJ, TSTG

Maximum

20

±8

8

6.4

30

2

1.28

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Maximum Junction-to-Ambient A

Maximum Junction-to-Ambient A

t ≤ 10s

Steady-State

RθJA

48

74

Maximum Junction-to-Lead C

Steady-State

RθJL

35

Max

62.5

110

40

Units

V

V

A

W

°C

Units

°C/W

°C/W

°C/W

Alpha & Omega Semiconductor, Ltd.

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