BCY70 查看數據表（PDF） - Continental Device India Limited
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BCY70 Datasheet PDF : 5 Pages
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PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BCY70 , 71, 72
TO-18
Metal Can Package
DESCRIPTION
Emitter Cut off Current
DC Current Gain
SYMBOL TEST CONDITION
IEBO VEB=4V, IC=0
VEB=4V, IC=0,
Tj =100ºC
VEB=54V, IC=0
hFE IC=10µA,VCE=1V
IC=100µA,VCE=1V
IC=1mA,VCE=1V
BCY70
BCY71
IC=10mA,VCE=1V
IC=50mA,VCE=1V
VALUE
MIN TYP
MAX
10
2
UNIT
nA
µA
500 nA
60
80
100
100
100
400
45
Collector Emitter Saturation Voltage
VCE(Sat) IC=10mA,IB=1mA
IC=50mA,IB=5mA
Base Emitter Saturation Voltage
VBE(Sat) IC=10mA,IB=1mA
600
IC=50mA,IB=5mA
250 mV
500 mV
900
V
1.2
V
DYNAMIC CHARACTERISTICS
Transition Frequency
Collector Capacitance
Emitter Capacitance
Noise Figure
Input Impedance
fT IC=10mA, VCE=20V
250
MHz
f=100MHz
BCY71
IC=100µA, VCE=20V
15
MHz
f=10.7MHz
Cc VCB=10V, IE=0, f=1MHz
Ce VEB=1.0V, f=1MHz, IC=0
NF IC=0.1mA, VCE=5V
BCY70, 72
Rs=2KΩ, f=10Hz to 10KHz
6.0
pF
8.0
pF
6
dB
BCY71
2
dB
hie IC=10mA, VCE=10V, f=1KHz
4.0
KΩ
Reverse Voltage Transfer Ratio
hre IC=10mA, VCE=10V, f=1KHz
2.1
x10-4
Small Signal Current Gain
| hfe | IC=10mA, VCE=10V, f=1KHz
325
Out put Admittance
hoe IC=10mA, VCE=10V, f=1KHz
20
µmhos
Continental Device India Limited
Data Sheet
Page 2 of 5
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