MUN2112 查看數據表（PDF） - Yea Shin Technology Co., Ltd
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MUN2112 Datasheet PDF : 8 Pages
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DATA SHEET
SEMICONDUCTOR
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
MUN211 Series
H
SOT–23 (TO–236AB)
3
12
PIN 1
R1
BASE
(INPUT)
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector-Base Voltage
VCBO
50
Collector-Emitter Voltage
VCEO
50
Collector Current
IC
100
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
246 (Note 1.)
400 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
Thermal Resistance –
Junction-to-Ambient
RθJA
508 (Note 1.)
311 (Note 2.)
Thermal Resistance –
Junction-to-Lead
RθJL
174 (Note 1.)
208 (Note 2.)
Junction and Storage
Temperature Range
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
TJ, Tstg
–55 to +150
Unit
Vdc
Vdc
mAdc
Unit
mW
°C/W
°C/W
°C/W
°C
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REV.02 20120403
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