D45VH1 查看數據表（PDF） - New Jersey Semiconductor
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D45VH1 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistors
D45VH Series
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
D45VH 1
-30
Collector-Emitter
VcEO(SUS) Sustaining Voltage
D45VH 4
D45VH 7
lc=-25mA;lB=0
-45
V
-60
D45VH10
-80
VcE(sat)-1 Collector-Emitter Saturation Voltage IC=-8A;IB=-0.8A
VcE(sat)-2
VaE(sat)
ICEV
Collector-Emitter Saturation Voltage lc=-15A;lB=-3A;Tc=100t:
Base-Emitter Saturation Voltage
Collector Cutoff Current
IC=-8A;IB=-0.8A
IC=-8A;IB=-0.8A;TC=100°C
VCE=RatedVCE;VBE(om=-4V
VcE=RatedVCE;VsE<om=-4V;Tc=100°C
IEBO
Emitter Cutoff Current
VEB= -7V; lc= 0
-1.0
V
-1.5 V
-1.0
-1.5
V
-10
-100
uA
-10
uA
hpE-1 DC Current Gain
lc=-2A;VCE=-1V
35
llFE-2
DC Current Gain
|C=-4A;VCE=-1V
20
COB Output Capacitance
lE=0;VCB=-10V,fte5t= 1.0MHz
fr
Current-Gain—Bandwidth Product lc= 0.1A;VcE= -10V;f,esr 20MHz
275
PF
50
MHz
Switching Times
td
Delay Time
50
ns
tr
Rise Time
t.
Storage Time
tf
Fall Time
lc=-8A; lBi=-ls2=-0.8A
Vcc= -20V
250 ns
700 ns
90
ns
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