BST61 查看數據表（PDF） - Philips Electronics
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BST61 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP Darlington transistors
Product specification
BST60; BST61; BST62
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
96
K/W
16
K/W
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICES
IEBO
hFE
VCEsat
VBEsat
collector cut-off current
BST60
BST61
BST62
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation
voltage
VBE = 0; VCE = −45 V
−
−
VBE = 0; VCE = −60 V
−
−
VBE = 0; VCE = −80 V
−
−
IC = 0; VEB = −4 V
−
−
VCE = −10 V; note 1; see Fig.2
IC = −150 mA
1000 −
IC = −500 mA
2000 −
IC = −500 mA; IB = −0.5 mA
−
−
IC = −500 mA; IB = −0.5 mA; Tj = 150 °C −
−
IC = −500 mA; IB = −0.5 mA
−
−
−50 nA
−50 nA
−50 nA
−50 nA
−
−
−1.3 V
−1.3 V
−1.9 V
fT
transition frequency
IC = −500 mA; VCE = −5 V; f = 100 MHz −
200 −
MHz
Switching times (between 10% and 90% levels); see Fig.3
ton
turn-on time
toff
turn-off time
ICon = −500 mA; IBon = −0.5 mA;
IBoff = 0.5 mA
−
500 −
ns
−
700 −
ns
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 Apr 27
4
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