RJK60S3DPE 查看數據表（PDF） - Renesas Electronics

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RJK60S3DPE

600V - 12A - SJ MOS FET High Speed Power Switching

Renesas Electronics 

RJK60S3DPE

Electrical Characteristics

Item

Drain to source breakdown voltage

Zero gate voltage drain current

Gate to source leak current

Gate to source cutoff voltage

Static drain to source on state

resistance

Symbol

V(BR)DSS

IDSS

IGSS

VGS(off)

RDS(on)

RDS(on)

Min

600

—

—

3

—

—

Gate resistance

Rg

—

Input capacitance

Ciss

—

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

td(on)

—

tr

—

td(off)

—

tf

—

Qg

—

Gate to source charge

Qgs

—

Gate to drain charge

Qgd

—

Body-drain diode forward voltage

VDF

—

Body-drain diode reverse recovery time

trr

—

Body-drain diode reverse recovery

Irr

—

current

Body-drain diode reverse recovery

charge

Qrr

—

Notes: 5. Pulse test

Typ

—

—

—

—

0.35

0.87

2.5

720

980

3.7

13

18

25

18

13.6

4.8

3.9

1.0

320

20

3.7

Preliminary

Max

—

1

±0.1

5

0.44

—

—

—

—

—

—

—

—

—

—

—

—

1.6

—

—

—

Unit

V

mA

A

V







pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

A

C

(Ta = 25°C)

Test conditions

ID = 10 mA, VGS = 0

VDS = 600 V, VGS = 0

VGS = +30V, 20 V, VDS = 0

VDS = 10 V, ID = 1 mA

ID = 6 A, VGS = 10 V Note5

Ta = 150°C

ID = 6 A, VGS = 10 V Note5

f = 1 MHz

VDS = 25 V, VGS = 0

VDS = 25 V

VGS = 0

f = 100 kHz

ID = 6 A

VGS = 10 V

RL = 50 

Rg = 10  Note5

VDD = 480 V

VGS = 10 V

ID = 12 A Note5

IF = 12 A, VGS = 0 Note5

IF = 12 A

VGS = 0

diF/dt = 100 A/s Note5

R07DS0732EJ0200 Rev.2.00

Oct 12, 2012

Page 2 of 7

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