BCX53 查看數據表（PDF） - Philips Electronics
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BCX53 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP medium power transistors
Product specification
BCX51; BCX52; BCX53
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
IEBO
hFE
VCEsat
VBE
fT
collector cut-off current
IE = 0; VCB = −30 V
−
−
IE = 0; VCB = −30 V; Tj = 125 °C
−
−
emitter cut-off current
IC = 0; VEB = −5 V
−
−
DC current gain
VCE = −2 V; see Fig.2
IC = −5 mA
40 −
IC = −150 mA
63 −
IC = −500 mA
25 −
DC current gain
IC = −150 mA; VCE = −2 V; see Fig.2
BCX51-10; BCX52-10; BCX53-10
63 −
BCX51-16; BCX52-16; BCX53-16
100 −
collector-emitter saturation voltage IC = −500 mA; IB = −50 mA
−
−
base-emitter voltage
IC = −500 mA; VCE = −2 V
−
−
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz −
50
−100 nA
−10 µA
−100 nA
−
250
−
160
250
−500
−1
−
mV
V
MHz
160
handbook, full pagewidth
hFE
120
80
40
0
−10−1
VCE = −2 V
MBH730
−1
−10
−102
Fig.2 DC current gain; typical values.
−103
IC (mA)
−104
1999 Apr 19
4
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