SS8050W 查看數據表（PDF） - Diode Semiconductor Korea
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SS8050W Datasheet PDF : 4 Pages
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Diode Semiconductor Korea
Silicon Epitaxial Planar Transistor
SS8050W
Parameter
Symbol Test conditions
DC current gain
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
VCE=1V,IC=100mA
VCE=1V,IC=800mA
IC=800 mA, IB= 80mA
IC=800 mA, IB= 80mA
Base-emitter voltage
Transition frequency
VBE
VCE=1V IC=10mA
VCE=10V, IC= 50mA
fT
f=30MHz
MIN MAX
120 400
40
0.5
1.2
UNIT
V
V
1
V
100
MHz
CLASSIFICATION OF hFE(1)
Rank
L
Range
120-200
H
200-350
J
300-400
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
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