A1469 查看數據表（PDF） - Inchange Semiconductor

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A1469

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;RBE=∞

V(BR)CBO Collector-base breakdown voltage

IC=-10mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-10mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=-2.5A IB=-0.125A

ICBO

Collector cut-off current

VCB=-40V IE=0

IEBO

Emitter cut-off current

VEB=-4V; IC=0

hFE

DC current gain

IC=-1A ; VCE=-2V

fT

Transition frequency

IC=-1A ; VCE=-5V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=-2.0A;IB1=-IB2=-0.1A

VCC=20V ,RL=10Ω

‹ hFE Classifications

Q

R

S

70-140 100-200 140-280

Product Specification

2SA1469

MIN TYP. MAX UNIT

-60

V

-80

V

-5

V

-0.4

V

-0.1 mA

-0.1 mA

70

280

100

MHz

0.1

μs

0.5

μs

0.1

μs

2

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