2SC2908 查看數據表（PDF） - Inchange Semiconductor
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2SC2908 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2908
DESCRIPTION
·With TO-3PN package
·Low collector saturation voltage
APPLICATIONS
·For use in power amplifier and
switching circuits applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
·
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
Derate above 25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction case
VALUE
200
100
12
5.0
10
2.5
50
0.4
150
-55~150
UNIT
V
V
V
A
A
A
W
W/℃
℃
℃
MAX
2.5
UNIT
℃/W
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