BFR35AP 查看數據表（PDF） - Siemens AG

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BFR35AP

NPN Silicon RF Transistor

Siemens AG 

NPN Silicon RF Transistor

• For low distortion broadband amplifiers and

oscillators up to 2GHz at collector currents from

0.5mA to 20mA

BFR 35AP

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking Ordering Code

Pin Configuration

BFR 35AP GEs

Q62702-F938

1=B

2=E

3=C

Package

SOT-23

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

TS ≤ 48 °C

Junction temperature

Ambient temperature

Storage temperature

Thermal Resistance

Junction - soldering point 1)

Symbol

VCEO

VCES

VCBO

VEBO

IC

IB

Ptot

Tj

TA

Tstg

RthJS

1) TS is measured on the collector lead at the soldering point to the pcb.

Values

15

20

20

2.5

30

4

280

150

- 65 ... + 150

- 65 ... + 150

≤ 365

Unit

V

mA

mW

°C

K/W

Semiconductor Group

1

Dec-12-1996

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