BCV49 查看數據表（PDF） - Philips Electronics
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BCV49 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN Darlington transistors
Product specification
BCV29; BCV49
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
96
K/W
16
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
IEBO
hFE
VCEsat
VBEsat
VBEon
fT
collector cut-off current
BCV29
BCV49
IE = 0; VCB = 30 V
IE = 0; VCB = 60 V
−
−
100 nA
−
−
100 nA
emitter cut-off current
IC = 0; VEB = 10 V
−
−
100 nA
DC current gain
BCV29
VCE = 5 V; see Fig.2
IC = 1 mA
4000 −
−
IC = 10 mA
IC = 100 mA
IC = 500 mA
10000 −
−
20000 −
−
4000 −
−
DC current gain
BCV49
VCE = 5 V; see Fig.2
IC = 1 mA
IC = 10 mA
2000 −
−
4000 −
−
IC = 100 mA
IC = 500 mA
collector-emitter saturation voltage IC = 100 mA; IB = 0.1 mA
10000 −
−
2000 −
−
−
−
1
V
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
IC = 100 mA; IB = 0.1 mA
−
IC = 10 mA; VCE = 5 V
−
IC = 30 mA; VCE = 5 V; f = 100 MHz −
−
1.5
−
1.4
220 −
V
V
MHz
1999 Apr 08
3
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