BCV29 查看數據表（PDF） - Siemens AG
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BCV29 Datasheet PDF : 4 Pages
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NPN Silicon Darlington Transistors
q For general AF applications
q High collector current
q High current gain
q Complementary types: BCV 28, BCV 48 (PNP)
BCV 29
BCV 49
Type
BCV 29
BCV 49
Marking
EF
EG
Ordering Code
(tape and reel)
Q62702-C1853
Q62702-C1832
Pin Configuration
1 234
B CEC
Package1)
SOT-89
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 130 ˚C
Junction temperature
Storage temperature range
Symbol
BCV 29
VCE0
30
VCB0
40
VEB0
10
IC
ICM
IB
IBM
P1tot
Tj
Tstg
Values
BCV 49
60
80
10
500
800
100
200
1
150
– 65 … + 150
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Rth JA
Rth JS
≤ 75
≤ 20
Unit
V
mA
W
˚C
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
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