BCV29 查看數據表（PDF） - Siemens AG

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BCV29

NPN Silicon Darlington Transistors

Siemens AG 

Collector-emitter saturation voltage

IC = f (VCEsat)

hFE = 1000

BCV 29

BCV 49

Base-emitter saturation voltage

IC = f (VBEsat)

hFE = 1000

Collector-base capacitance CCB0 = f (VCB0)

Emitter-base capacitance CEB0 = f (VEB0)

DC current gain hFE = f (IC)

VCE = 5 V

Semiconductor Group

4

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