BD242 查看數據表（PDF） - Comset Semiconductors
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BD242 Datasheet PDF : 3 Pages
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PNP BD242 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCE=-30 V
ICEO
Collector Cutoff Current
VCE=-30 V
VCE=-60 V
VCE=-60 V
IEBO
Emitter Cutoff Current
VBE=-5 V
VCE=-55 V
ICES
Collector Cutoff Current
(VBE = 0)
VCE=-70 V
VCE=-90 V
VCE=-115 V
VCEO(sus)
Collector-Emitter
Voltage (IB = 0) (*)
Sustaining
IC =-30mA
hFE
DC Current Gain (*)
VCE=-4 V
IC=-1 A
VCE=-4 V
IC=-3 A
VCE(SAT)
Collector-Emitter saturation
Voltage (*)
IC=-3 A
IB=-0.6 A
VBE(on)
Base-Emitter Voltage (*)
VCE=-4 V
IC=-3 A
VCE=-10 V
IC=-0.5 A
f = 1KHz
hfe
Small Signal Current Gain
VCE=-10 V
IC=-0.5 A
f = 1MHz
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
BD242
BD242A
BD242B
BD242C
BD242
BD242A
BD242B
BD242C
BD242
BD242A
BD242B
BD242C
BD242
BD242A
BD242B
BD242C
BD242
BD242A
BD242B
BD242C
BD242
BD242A
BD242B
BD242C
BD242
BD242A
BD242B
BD242C
BD242
BD242A
BD242B
BD242C
BD242
BD242A
BD242B
BD242C
BD242
BD242A
BD242B
BD242C
Min Typ Max Unit
-
-
-
-
-
-
-0.3 mA
-
-
-
-
-
-
-
-
-1.0 mA
-
-
-
-
-
-
-
-
-0.2 mA
-
-
-45
-60
-80
V
-100
25
-
-
-
10
-
-
-
- -1.2 V
-
- -1.8 V
20
-
-
3
-
-
-
23/10/2012
COMSET SEMICONDUCTORS
2/3
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