PIP3119-P 查看數據表（PDF） - Philips Electronics

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PIP3119-P

Logic level TOPFET

Philips Electronics 

Philips Semiconductors

Logic level TOPFET

Product specification

PIP3119-P

OUTPUT CHARACTERISTICS

Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN.

Off-state

VIS = 0 V

V(CL)DSS Drain-source clamping voltage ID = 10 mA

50

IDM = 4 A; tp ≤ 300 µs; δ ≤ 0.01

50

IDSS

Drain source leakage current VDS = 40 V

-

Tmb = 25˚C

-

On-state

VIS ≥ 4.4 V; tp ≤ 300 µs; δ ≤ 0.01

RDS(ON)

Drain-source resistance

IDM = 10 A

-

Tmb = 25˚C

-

TYP.

-

60

-

0.1

-

22

MAX. UNIT

-

V

70

V

100 µA

10 µA

52 mΩ

28 mΩ

OVERLOAD CHARACTERISTICS

VIS = 5 V; Tmb = 25˚C unless otherwise specified.

SYMBOL PARAMETER

CONDITIONS

Short circuit load

ID

Drain current limiting

Overload protection

VDS = 13 V

4.4 V ≤ VIS ≤ 5.5 V;

-40˚C ≤ Tmb ≤ 150˚C

PD(TO)

TDSC

Overload power threshold

Characteristic time

device trips if PD > PD(TO)

which determines trip time1

Overtemperature protection

Tj(TO)

Threshold junction

temperature2

MIN. TYP. MAX. UNIT

28.5 43 57

A

21

-

65

A

75 185 250 W

200 380 600 µs

150 170 -

˚C

1 Trip time td sc varies with overload dissipation PD according to the formula td sc ≈ TDSC / ln[ PD / PD(TO)].

2 This is independent of the dV/dt of input voltage VIS.

May 2001

3

Rev 1.000

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