MMBT3906 查看數據表（PDF） - Infineon Technologies

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MMBT3906

PNP Silicon Switching Transistors

Infineon Technologies 

SMBT3906...MMBT3906

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Total power dissipation-

TS ≤ 71 °C

TS ≤ tbd °C

TS ≤ 115 °C

TS ≤ 105 °C

Junction temperature

Storage temperature

Thermal Resistance

Parameter

Junction - soldering point1)

SMBT3906/ MMBT3906

SMBT3906S

SMBT3906U

Symbol

VCEO

VCBO

VEBO

IC

Ptot

Tj

Tstg

Symbol

RthJS

1For calculation of RthJA please refer to Application Note Thermal Resistance

Value

40

40

6

200

330

250

250

330

150

-65 ... 150

Value

≤ 240

≤ 140

≤ 135

Unit

V

mA

mW

°C

Unit

K/W

2

2008-02-29

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