2N4126 查看數據表（PDF） - Fairchild Semiconductor
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2N4126 Datasheet PDF : 6 Pages
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PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
IC = 1.0 mA, IB = 0
IC = 10 µA, IE = 0
IC = 10 µA, IC = 0
VCB = 20 V, IE = 0
VEB = 3.0 V, IC = 0
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 2.0 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 50 mA, IB = 5.0 mA
IC = 50 mA, IB = 5.0 mA
25
V
25
V
4.0
V
50
nA
50
nA
120
360
60
0.4
V
0.95
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
Cibo
Input Capacitance
Ccb
Collector-Base Capcitance
hfe
Small-Signal Current Gain
NF
Noise Figure
IC = 10 mA, VCE = 20 V,
250
f = 100 MHz
VEB = 0.5 V, IC = 0,
f = 1.0 MHz
VCB = 5.0 V, IE = 0,
f = 100 kHz
IC = 2.0 mA, VCE = 10 V,
120
f = 1.0 kHz
IC = 100 µA, VCE = 5.0 V,
RS=1.0 kΩ, f=10 Hz to 15.7 kHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
MHz
10
pF
4.5
pF
480
4.0
dB
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