1N5822(2007) 查看數據表（PDF） - Vishay Semiconductors
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1N5822 Datasheet PDF : 4 Pages
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1N5820 thru 1N5822
Vishay General Semiconductor
1000
100
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
10
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
0.1
0
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-201AD
0.210 (5.3)
0.190 (4.8)
DIA.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
Document Number: 88526 For technical questions within your region, please contact one of the following:
Revision: 20-Aug-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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