2N3439 查看數據表（PDF） - ON Semiconductor
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2N3439 Datasheet PDF : 3 Pages
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2N3439
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
ON CHARACTERISTICS
Emitter−Base Cutoff Current
(VEB = 7.0 Vdc)
Collector−Emitter Cutoff Current
(VCE = 300 Vdc)
Collector−Emitter Cutoff Current
(VCE = 450 Vdc, VBE = −1.5 Vdc)
Collector−Base Cutoff Current
(VCE = 360 Vdc)
(VCE = 450 Vdc)
(VCE = 360 Vdc, TA = 150°C)
DC Current Gain (Note 1)
(IC = 0.2 mAdc, VCE = 10 Vdc)
(IC = 2.0 mAdc, VCE = 10 Vdc)
(IC = 20 mAdc, VCE = 10 Vdc)
(IC = 20 mAdc, VCE = 10 Vdc, TA = −55°C)
Collector −Emitter Saturation Voltage (Note 1)
(IC = 50 mAdc, IB = 4.0 mAdc)
Base −Emitter Saturation Voltage (Note 1)
(IC = 50 mAdc, IB = 4.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz)
Input Capacitance
(VCB = 5.0 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz)
Small−Signal Short−Circuit Forward Current Transfer Ratio
(IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Small−Signal Current Gain
(IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz)
SWITCHING CHARACTERISTICS
Turn−on Time (Note 2)
(VCC = 200 Vdc, IC = 20 mAdc, IB1 = 2.0 mAdc)
Turn−off Time (Note 2)
(VCC = 200 Vdc, IC = 20 mAdc, IB1 = −IB2 = 2.0 mAdc)
1. Pulse Test: See section 4 of MIL−STD−750.
2. See Figure 14 in MIL−PRF−19500/368.
Symbol
IEBO
ICEO
ICEX
ICBO
hFE
VCE(sat)
VBE(sat)
Cobo
Cibo
hfe
|hfe|
ton
toff
Min
Max
−
10
−
2.0
−
5.0
−
2.0
−
5.0
−
6.0
10
−
30
−
40
160
15
−
−
0.5
−
1.3
−
10
−
75
25
−
3.0
15
−
1.0
−
10
Unit
mAdc
mAdc
mAdc
mAdc
−
Vdc
Vdc
pF
pF
−
−
ms
ms
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