BUZ11A 查看數據表（PDF） - Inchange Semiconductor
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BUZ11A Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
BUZ11A
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 19A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 50V; VGS= 0
VSD
Diode Forward Voltage
IF= 60A; VGS= 0
Td(on) Turn-on Time
tr
Rise Time
Td(off) Turn-off Delay Time
VDD = 30 V ID = 3A
RGS = 50Ω VGS = 10 V
tf
Rise Time
MIN TYPE MAX UNIT
50
V
2.1
4
V
0.045 0.055
Ω
±100
nA
1
uA
1.8
V
15
25
ns
55
85
ns
120
160
ns
80
110
ns
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