2SB1226 查看數據表（PDF） - Quanzhou Jinmei Electronic

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2SB1226

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-base breakdown voltage

IC=-5mA; IE=0

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=∞

VCEsat Collector-emitter saturation voltage IC=-1.5A ; IB=-3mA

VBEsat Base-emitter saturation voltage

IC=-1.5A ; IB=-3mA

ICBO

Collector cut-off current

VCB=-80V;IE=0

IEBO

Emitter cut-off current

VEB=-5V;IC=0

hFE

DC current gain

IC=-1.5A ; VCE=-3V

fT

Transition frequency

IC=-1.5A ; VCE=-5V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=500IB1=-500IB2=-1A

VCC=-50V ,RL=50Ω

Product Specification

2SB1226

MIN TYP. MAX UNIT

-110

V

-100

V

-1.0 -1.5

V

-2.0

V

-0.1 mA

-3.0 mA

1500 4000

20

MHz

0.7

μs

2.4

μs

1.2

μs

2

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