2SC5225 查看數據表（PDF） - Hitachi -> Renesas Electronics
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2SC5225 Datasheet PDF : 7 Pages
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2SC5225
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V(BR)CBO
100
—
—
V
voltage
IC = 100 µA, IE = 0
Collector to emitter breakdown V(BR)CEO 80
—
—
V
voltage
IC = 1 mA, RBE = ∞
Collector to base cutoff current ICBO
Emitter to base cutoff current IEBO
DC current transfer ratio
hFE
—
—
1
µA
VCB = 80 V, IE = 0
—
—
10
µA
VEB = 3 V, IC = 0
20
70
—
VCE = 5 V, IC = 50 mA
Pulse test
Gain bandwidth product
fT
Emitter input capacitance
Cib
Collector output capacitance Cob
1.2
1.4
—
—
13
19
—
3
4
GHz
pF
pF
VCE = 10 V, IC = 50 mA
VEB = 0, IC = 0, f = 1 MHz
VCB = 10 V, IE = 0, f = 1 MHz
Collector Power Dissipation Curve
1000
800
600
400
200
0
50
100
150
200
Ambient Temperature Ta (°C)
DC Current Transfer Ratio vs.
Collector Current
100
VCE = 5V
50
20
10
12
5 10 20 50 100 200 500
Collector Current I C (mA)
3
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