SGP20N60HS(2009) 查看數據表（PDF） - Infineon Technologies

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SGP20N60HS
(Rev.:2009)

High Speed IGBT in NPT-technology

Infineon Technologies 

SGP20N60HS

SGW20N60HS

τ1

r1

Tj (t)

p(t)

r1

τ2

r2

r2

τn

rn

rn

TC

Figure D. Thermal equivalent

circuit

Figure A. Definition of switching times

Figure B. Definition of switching losses

Power Semiconductors

11

Figure E. Dynamic test circuit

Leakage inductance Lσ =60nH

a nd Stray capacity Cσ =40pF.

Rev 2.5 Nov 09

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