AP6900GSM-HF 查看數據表（PDF） - Advanced Power Electronics Corp
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AP6900GSM-HF Datasheet PDF : 9 Pages
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Advanced Power
Electronics Corp.
AP6900GSM-HF
Halogen-Free Product
DUAL N-CHANNEL MOSFET WITH
SCHOTTKY DIODE
▼ Simple Drive Requirement
▼ DC-DC Converter Suitable
▼ Fast Switching Performance
▼ RoHS Compliant
Description
S1/D2
S1/D2
S1/D2
G1
SO-8
S2/A
G2
D1
D1
CH-1
CH-2
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
Advanced Power MOSFETs from APEC provide the designer with
D1
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
30V
30mΩ
5.7A
30V
22mΩ
9.8A
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G1
N-Channel 1
MOSFET
S1/D2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
G2
N-Channel 2
MOSFET
S2/A
Schottky Diode
Rating
Channel-1 Channel-2
30
30
±20
±20
5.7
9.8
4.6
7.8
20
30
1.4
2.2
0.01
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-a (CH-1)
Rthj-a (CH-2)
Thermal Resistance Junction-ambient3
Thermal Resistance Junction-ambient3
Value
Typ.
Max.
70
90
42
55
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
200805153
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