AP6900GSM-HF 查看數據表（PDF） - Advanced Power Electronics Corp

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AP6900GSM-HF

DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE

Advanced Power Electronics Corp 

AP6900GSM-HF

Schottky Specifications@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

VF

Forward Voltage Drop

IF=1.0A

-

Irm

Maximum Reverse Leakage Current Vr=30V

-

Maximum Reverse Leakage Current Vr=30V,Tj=100℃

-

CT

Junction Capacitance

Vr=10V

-

Typ.

0.47

0.004

0.5

66

Max.

0.5

0.2

1

-

Units

V

mA

mA

pF

4

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