2SC1061 查看數據表（PDF） - Quanzhou Jinmei Electronic
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2SC1061 Datasheet PDF : 4 Pages
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=5mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=5mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A
VBE
Base-emitter on voltage
IC=1A ; VCE=4V
ICBO
Collector cut-off current
VCB=25V;IE=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=4V
hFE-2
DC current gain
IC=1A ; VCE=4V
fT
Transition frequency
IC=0.5A ; VCE=4V
hFE-2 classifications
A
B
C
D
35-70 60-120 100-200 160-320
www.jmnic.com
2SC1061
MIN TYP. MAX UNIT
50
V
50
V
4
V
1.0
V
1.5
V
0.1
mA
0.1
mA
35
35
320
5.0
MHz
2
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