UTC2SA1700(Ver_A) 查看數據表（PDF） - Unisonic Technologies
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UTC2SA1700 Datasheet PDF : 4 Pages
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UTC 2SA1700
CLASSIFICATION OF hFE
RANK
D
RANGE
60-120
PNP EPITAXIAL SILICON TRANSISTOR
E
100-200
TEST CIRCUIT(Unit : (resistance : Ω, capacitance : F)
IB1
INPUT
RB
OUTPUT
PW=20μs
Duty Cycle≦1%
IB2
VR
50
+
+
100μ
470μ
VBE= 1V
-10IB1= 10IB2=Ic= -50mA
RL=3kΩ,RB=200Ω at Ic= -50mA
RL
VCC= -150V
ELECTRICAL CHARACTERISTICS CURVES
-120
-100
-80
IC-VBE
VCE= -10V
I(tot)
mA
-60
TA=25℃
-40
TA=70℃
-20
TA= -30℃
0
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
Base to Emitter Voltage,VBE-V
hFE-Ic
5
3
TA=70℃
VCE= -10V
2
100
TA=25℃
7
5
TA= -30℃
3
2
10
7
5
7-1.0
2
3
5 7 -10 2 3
5 7-100 2 3
Collector Current,Ic- mA
UTC UNISONIC TECHNOLOGIES CO. LTD 2
QW-R213-011,A
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