2SJ575 查看數據表（PDF） - Hitachi -> Renesas Electronics
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2SJ575 Datasheet PDF : 8 Pages
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2SJ575
Silicon P Channel MOS FET
High Speed Switching
Features
• Low on-resistance
RDS =2.8 Ω typ. (VGS = -10 V , ID = -50 mA)
RDS =5.7 Ω typ. (VGS = -4 V , ID = -50 mA)
• 4 V gate drive device.
• Small package (MPAK)
Outline
MPAK
3
D
3
2
G
1
S
ADE-208-740B (Z)
3rd.Edition.
June 1999
1
2
1. Source
2. Gate
3. Drain
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