2SD1277 查看數據表（PDF） - SavantIC Semiconductor
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2SD1277 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1277 2SD1277A
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SD1277
2SD1277A
IC=30mA , IB=0
VCEsat
VBEsat
Collector-emitter saturation voltage IC=4A; IB=8mA
Base-emitter saturation voltage
IC=4A ;IB=8mA
ICBO
IEBO
hFE-1
hFE-2
Collector
cut-off current
2SD1277 VCB=60V ;IE=0
2SD1277A VCB=80V; IE=0
Emitter cut-off current
VEB=7V; IC=0
DC current gain
IC=8A ; VCE=3V
DC current gain
IC=4A ; VCE=3V
fT
Transition frequency
IC=0.5A; VCE=10V;f=1MHz
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=4A ;IB1=8mA
IB2=-8mA;VCC=50V
hFE-2 Classifications
Q
R
2000-5000 4000-10000
MIN TYP. MAX UNIT
60
V
80
1.5
V
2
V
0.1
mA
500
2000
20
2
mA
10000
MHz
0.5
µs
4.0
µs
1.0
µs
2
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