KBJ10A 查看數據表（PDF） - Galaxy Semi-Conductor
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KBJ10A Datasheet PDF : 3 Pages
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Production specification
Silicon Bridge Rectifiers
KBJ10A--KBJ10M
FEATURES
Rating to 1000V PRV
Surge overload rating to 200 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
MECHANCAL DATA
Polarity: Symbols molded on body
Weight: 0.23 ounces,6.6 grams
Mounting position: Any
Maximum Ratings (@TA = 25°C unless otherwise specified)
Characteristic
Symbol KBJ10A KBJ10B KBJ10D
KBJ10G
Pb
Lead-free
KBJ10J KBJ10K KBJ10M
UNITS
Maximum recurrent peak reverse voltage
VRRM
50
Maximum RMS voltage
VRMS
35
Maximum DC blocking voltage
VDC
50
Maximum average forward Output current
@TA=110℃
IF(AV)
Peak forward surge current
8.3ms single half-sine-wave
IFSM
superimposed on rated load
100
200
400
600
800
1000
V
70
140
280
420
560
700
V
100
200
400
600
800
1000
V
10.0
A
200.0
A
Thermal Characteristics
Characteristic
Symbol KBJ10A KBJ10B KBJ10D KBJ10G KBJ10J KBJ10K KBJ10M UNITS
Typical junction capacitance per element
CJ
Typical thermal resistance
RθJC
Operating junction temperature range
TJ
Storage temperature range
TSTG
55
1.4
- 55 ---- + 150
- 55 ---- + 150
pF
℃/W
℃
℃
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Characteristic
Symbol
Maximum instantaneous forward voltage
VF
@5.0A
Maximum reverse current @TA=25 ℃
IR
at rated DC blocking voltage @TA=100℃
KBJ10A KBJ10B KBJ10D KBJ10G
1.1
5.0
0.5
KBJ10J
KBJ10K KBJ10M
UNITS
V
μA
mA
Document Number: KJ6810AA
www.gmicroelec.com
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