BAS40L(2012) 查看數據表（PDF） - ON Semiconductor
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BAS40L Datasheet PDF : 3 Pages
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BAS40L, SBAS40L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R
40
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
−
Reverse Leakage
(VR = 25 V)
IR
−
Forward Voltage
(IF = 1.0 mAdc)
VF
−
Forward Voltage
(IF = 10 mAdc)
VF
−
Forward Voltage
(IF = 40 mAdc)
VF
−
Max
Unit
V
−
pF
5.0
mAdc
1.0
mVdc
380
mVdc
500
Vdc
1.0
100
10
150°C
1.0 1 25°C
85°C
25°C
- 40°C - 55°C
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
100
TA = 150°C
10 125°C
1.0 85°C
0.1
0.01 25°C
0.001
0
5.0
10
15
20
25
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Reverse Current versus Reverse
Voltage
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 5.0 10 15 20 25 30 35 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Capacitance
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