BC859CLT1G(2009) 查看數據表（PDF） - ON Semiconductor
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BC859CLT1G Datasheet PDF : 7 Pages
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BC856ALT1G Series
General Purpose
Transistors
PNP Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector-Emitter Voltage
BC856
VCEO
−65
V
BC857
−45
BC858, BC859
−30
Collector-Base Voltage
BC856
VCBO
−80
V
BC857
−50
BC858, BC859
−30
Emitter−Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VEBO
IC
−5.0
−100
V
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board,
PD
(Note 1) TA = 25°C
Derate above 25°C
225
mW
1.8
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556
°C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD
300
mW
2.4
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
http://onsemi.com
1
BASE
COLLECTOR
3
2
EMITTER
3
1
2
SOT−23 (TO−236AB)
CASE 318
STYLE 6
MARKING DIAGRAM
xx M G
G
1
xx = Device Code
xx = (Refer to page 6)
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 − Rev. 11
Publication Order Number:
BC856ALT1/D
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