IRFR120TRL 查看數據表（PDF） - Vishay Semiconductors

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IRFR120TRL

Power MOSFET

Vishay Semiconductors 

IRFR420, IRFU420, SiHFR420, SiHFU420

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN. TYP. MAX. UNIT

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

Pulsed Diode Forward Currenta

ISM

MOSFET symbol

showing the

integral reverse

p - n junction diode

D

G

S

-

-

2.4

A

-

-

8.0

Body Diode Voltage

VSD

TJ = 25 °C, IS = 2.4 A, VGS = 0 Vb

-

-

1.6

V

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

trr

-

260

520

ns

TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/µsb

Qrr

-

0.70 1.4

µC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 2 -Typical Output Characteristics, TC = 150 °C

Document Number: 91275

S-Pending-Rev. A, 21-Jul-08

Fig. 4 - Normalized On-Resistance vs. Temperature

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