BU505 查看數據表（PDF） - Inchange Semiconductor
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BU505 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ;IB=0;L=25mH
VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.9 A
VBEsat Base-emitter saturation voltage
IC=2A ;IB=0.9 A
hFE
DC current gain
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=0.1A ;VCE=5V
VCE =1500V;VBE=0;
TC=125℃
VEB=5V; IC=0
fT
Transition frequency
Is/b
Second breakdown current
IC=0.1A ;VCE=5V
VCE=120V;t=200μs
Product Specification
BU505
MIN TYP. MAX UNIT
700
V
5.0
V
1.3
V
6
30
0.15
1.0
mA
1.0
mA
7
MHz
2
A
2
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