IRFR4105Z 查看數據表（PDF） - Kersemi Electronic Co., Ltd.

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IRFR4105Z

Power MOSFET

Kersemi Electronic Co., Ltd. 

1200

1000

800

600

VGS = 0V, f = 1 MHZ

Ciss = C gs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

400

200

0

1

Coss

Crss

10

100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

IRFR/U4105Z

20

ID= 18A

16

12

VDS= 44V

VDS= 28V

VDS= 11V

8

4

0

0

FOR TEST CIRCUIT

SEE FIGURE 13

5 10 15 20 25 30

QG Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000.0

100.0

10.0

TJ = 175°C

1.0

TJ = 25°C

0.1

0.0

VGS = 0V

0.5

1.0

1.5

2.0

VSD, Source-toDrain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

1000

100

OPERATION IN THIS AREA

LIMITED BY R DS(on)

10

100µsec

1

Tc = 25°C

Tj = 175°C

Single Pulse

0.1

1

10

1msec

10msec

100

VDS , Drain-toSource Voltage (V)

1000

Fig 8. Maximum Safe Operating Area

2014-8-15

4

www.kersemi.com

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