PN2369 查看數據表（PDF） - Continental Device India Limited
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PN2369 Datasheet PDF : 4 Pages
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NPN SILICON HIGH SPEED SWITCHING TRANSISTORS
PN2369
TO-92
Plastic Package
EBC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Breakdown Voltage
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Leakage Current
Collector Leakage Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
DYNAMIC CHARACTERISTICS
BVCEO
BVCES
BVCBO
BVEBO
ICBO
ICEO
VCE(sat)
VBE(sat)
hFE
IC=10mA, IB=0
IC=10µA, VBE=0
IC=10µA, IE=0
IE=10µA, IC=0
VCB=20V, IE=0
VCB=20V, Ta=125ºC
IC=10mA, IB=1mA
IC=10mA, IB=1mA
IC=10mA, VCE=1V
IC=100mA, VCE=2V*
IC=10mA, VCE=1V,
Ta=125ºC
Output Capacitance
Cc
IE=0, VCB=5V
f=1MHz
Small Signal Current Gain
SWITCHING CHARCTERISTICS
| hfe |
VCE =10V,IC=10mA
f=100MHZ
Turn on Time
Turn off Time
ton
IC=10mA, IB1=3mA, VCC=3V
toff
IC=10mA, IB1=3mA, VCC=3V,
IB2=1.5mA
Storage Time
ts
IC=10mA, IB1=10mA = IB2
*Pulse Condition: Length < 300µs, Duty Cycle < 2%.
VALUE
MIN
MAX
15
40
40
4.5
400
30
0.25
0.7
0.85
40
120
20
20
4
5
12
18
13
UNIT
V
V
V
V
nA
µA
V
V
pF
MHz
ns
ns
ns
Continental Device India Limited
Data Sheet
Page 2 of 4
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