2SB859 查看數據表（PDF） - Quanzhou Jinmei Electronic
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2SB859 Datasheet PDF : 4 Pages
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JMnic
Silicon PNP Power Transistors
Product Specification
2SB859
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=∞
V(BR)EBO Emitter-base breakdown votage
IE=-10μA; IC=0
VCEsat Collector-emitter saturation voltage IC=-2 A;IB=-0.2 A
VBE
Base-emitter voltage
IC=-1A ; VCE=-5V
ICBO
Collector cut-off current
VCB=-80V; IE=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-0.1A ; VCE=-5V
Cob
Collector output capacitance
IC=0; VCB=-20V;f=1MHz
fT
Transition frequency
IC=-0.5A ; VCE=-5V
hFE-1 classifications
B
C
60-120
100-200
MIN TYP. MAX UNIT
-80
V
-5
V
-2.0
V
-1.5
V
-0.1
mA
60
200
35
75
pF
20
MHz
2
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